发明授权
US07477353B2 Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
失效
平版印刷设备,形成图案的方法和制造半导体器件的方法
- 专利标题: Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
- 专利标题(中): 平版印刷设备,形成图案的方法和制造半导体器件的方法
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申请号: US11174722申请日: 2005-07-06
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公开(公告)号: US07477353B2公开(公告)日: 2009-01-13
- 发明人: Shinichi Ito , Tsuyoshi Shibata
- 申请人: Shinichi Ito , Tsuyoshi Shibata
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2004-201011 20040707
- 主分类号: G03B27/42
- IPC分类号: G03B27/42 ; G03B27/52 ; G03B27/32 ; G03F7/00
摘要:
A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.
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