发明授权
US07479403B2 Pinned photodiode integrated with trench isolation and fabrication method
有权
固定光电二极管集成沟槽隔离和制造方法
- 专利标题： Pinned photodiode integrated with trench isolation and fabrication method
- 专利标题（中）： 固定光电二极管集成沟槽隔离和制造方法
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申请号： US11488611申请日： 2006-07-19
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公开(公告)号： US07479403B2公开(公告)日： 2009-01-20
- 发明人: Dun-Nian Yaung , Sou-Kuo Wu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
- 申请人： Dun-Nian Yaung , Sou-Kuo Wu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.