发明授权
US07479416B2 Thin film transistor array panel and manufacturing method thereof 有权
薄膜晶体管阵列面板及其制造方法

Thin film transistor array panel and manufacturing method thereof
摘要:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.
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