发明授权
- 专利标题: Thin film transistor array panel and manufacturing method thereof
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
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申请号: US11330312申请日: 2006-01-10
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公开(公告)号: US07479416B2公开(公告)日: 2009-01-20
- 发明人: Kyung-Min Park , Jin-Goo Jung , Chun-Gi You
- 申请人: Kyung-Min Park , Jin-Goo Jung , Chun-Gi You
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2005-0004670 20050118
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.
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