发明授权
- 专利标题： Nitride semiconductor light emitting device
- 专利标题（中）： 氮化物半导体发光器件
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申请号： US11435751申请日： 2006-05-18
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公开(公告)号： US07479661B2公开(公告)日： 2009-01-20
- 发明人: Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
- 申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
- 申请人地址： KR Kyungki-Do
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Kyungki-Do
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2005-0042090 20050519
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0
公开/授权文献
- US20060261367A1 Nitride semiconductor light emitting device 公开/授权日：2006-11-23
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