发明授权
- 专利标题： Silicon inertial sensors formed using MEMS
- 专利标题（中）： 使用MEMS形成的硅惯性传感器
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申请号： US11240804申请日： 2005-09-30
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公开(公告)号： US07481112B2公开(公告)日： 2009-01-27
- 发明人: Eun Sok Kim , Qiang Zou
- 申请人： Eun Sok Kim , Qiang Zou
- 申请人地址： US CA Los Angeles
- 专利权人： University of Southern California
- 当前专利权人： University of Southern California
- 当前专利权人地址： US CA Los Angeles
- 代理机构： Fish & Richardson P.C.
- 主分类号： G01P15/12
- IPC分类号： G01P15/12 ; G01P9/04
摘要：
A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane.
公开/授权文献
- US20070193353A1 Silicon inertial sensors formed using MEMS 公开/授权日：2007-08-23