发明授权
- 专利标题： Method of manufacturing a semiconductor device having MEMS
- 专利标题（中）： 制造具有MEMS的半导体器件的方法
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申请号： US11330951申请日： 2006-01-11
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公开(公告)号： US07482196B2公开(公告)日： 2009-01-27
- 发明人: Masami Urano , Hiromu Ishii , Toshishige Shimamura , Yasuyuki Tanabe , Katsuyuki Machida , Tomomi Sakata
- 申请人： Masami Urano , Hiromu Ishii , Toshishige Shimamura , Yasuyuki Tanabe , Katsuyuki Machida , Tomomi Sakata
- 申请人地址： JP Tokyo
- 专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 优先权： JP2002/272897 20020919; JP2002/272905 20020919; JP2002/297835 20021010; JP2002/319478 20021101
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In a semiconductor device having a MEMS according to this invention, a plurality of units having movable portions for constituting a MEMS are monolithically mounted on a semiconductor substrate on which an integrated circuit including a driving circuit, sensor circuit, memory, and processor is formed. Each unit has a processor, memory, driving circuit, and sensor circuit.
公开/授权文献
- US20060115920A1 Semiconductor device having MEMS 公开/授权日：2006-06-01