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8 条记录 (耗时 0.015 秒)

    Micromachine and manufacturing method
    1.
    发明授权
    Micromachine and manufacturing method 有权
    微机械及制造方法

    公开(公告)号：US07189625B2

    公开(公告)日：2007-03-13

    申请号：US11243550

    申请日：2005-10-04

    申请人： Hiromu Ishii ,  Yasuyuki Tanabe ,  Katsuyuki Machida ,  Masami Urano ,  Shouji Yagi ,  Tomomi Sakata

    发明人： Hiromu Ishii ,  Yasuyuki Tanabe ,  Katsuyuki Machida ,  Masami Urano ,  Shouji Yagi ,  Tomomi Sakata

    IPC分类号： H01L21/20 ,  H01L21/469 ,  H01L29/82

    CPC分类号： B81B3/0008 ,  B81B2201/045 ,  B81C2201/112

    摘要： In a micromachine according to this invention, a polyimide film is formed on the surface of each electrode. The polyimide film is formed as follows. A substrate having each electrode and a counterelectrode are dipped in an electrodeposition polyimide solution, and a positive voltage is applied to the electrode. A material dissolved in the electrodeposition polyimide solution is deposited on a surface of the positive-voltage-applied electrode that is exposed in the solution, thus forming a polyimide film on the surface.

    摘要翻译： 在根据本发明的微型机器中，在每个电极的表面上形成聚酰亚胺膜。 聚酰亚胺膜如下形成。 将具有每个电极和反电极的基板浸渍在电沉积聚酰亚胺溶液中，并向电极施加正电压。 溶解在电沉积聚酰亚胺溶液中的材料沉积在暴露在溶液中的正电压施加电极的表面上，从而在表面上形成聚酰亚胺膜。

    Micromachine manufacturing method
    5.
    发明授权
    Micromachine manufacturing method 有权

    公开(公告)号：US06743653B2

    公开(公告)日：2004-06-01

    申请号：US10434761

    申请日：2003-05-08

    申请人： Yasuyuki Tanabe ,  Katsuyuki Machida ,  Hiromu Ishii ,  Shouji Yagi

    发明人： Yasuyuki Tanabe ,  Katsuyuki Machida ,  Hiromu Ishii ,  Shouji Yagi

    IPC分类号： H01L2100

    CPC分类号： B81C1/00182 ,  B81B2201/045

    摘要： A micromachine manufacturing method according to this invention includes at least the movable portion formation step of selectively etching a single-crystal silicon layer by using a movable portion formation mask pattern as a mask, thereby forming on the single-crystal silicon layer a movable portion which is coupled to the surrounding single-crystal silicon layer via a coupling portion on a buried oxide, the movable portion protective film formation step of forming a movable portion protective film on the single-crystal silicon layer so as to cover the movable portion while the movable portion is formed on the buried oxide, and the step of forming a buried protective film which covers the movable portion exposed in the substrate opening and movable portion opening, and the single-crystal silicon layer around the movable portion while the movable portion protective film is formed.

    Method of manufacturing surface shape recognition sensor
    6.
    发明授权
    Method of manufacturing surface shape recognition sensor 失效

    公开(公告)号：US07045379B2

    公开(公告)日：2006-05-16

    申请号：US10385532

    申请日：2003-03-11

    申请人： Yasuyuki Tanabe ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Tetsuya Oonishi ,  Toshihiko Kumazaki

    发明人： Yasuyuki Tanabe ,  Katsuyuki Machida ,  Hakaru Kyuragi ,  Tetsuya Oonishi ,  Toshihiko Kumazaki

    IPC分类号： H01L21/44

    CPC分类号： G06K9/00053

    摘要： In a method of manufacturing a surface shape recognition sensor, first and second interconnections are formed on a semiconductor substrate. An interlayer dielectric film on the semiconductor substrate covers the interconnections. A first metal film is electrically connected to the interconnections through first and second through holes in the interlayer dielectric film. A first mask pattern on the first metal film covers predetermined first and second regions corresponding to the through holes, respectively. The exposed first metal film is selectively removed to form a sensor electrode and connection electrode film, formed of the first metal film, in the first and second regions, respectively. An insulating passivation film on the interlayer dielectric film covers the sensor electrode and connection electrode film. A third through hole in the passivation film reaches the connection electrode film. A second metal film on the passivation film is in contact with the exposed connection electrode film. A second mask pattern on the second metal film has a pattern portion on a predetermined region. The second metal film is selectively removed using the second mask pattern as a mask to form a ground electrode connected to the second interconnection through the connection electrode film.

    Micromachine and manufacturing method
    7.
    发明申请
    Micromachine and manufacturing method 有权
    微机械及制造方法

    公开(公告)号：US20060027839A1

    公开(公告)日：2006-02-09

    申请号：US11243550

    申请日：2005-10-04

    申请人： Hiromu Ishii ,  Yasuyuki Tanabe ,  Katsuyuki Machida ,  Masami Urano ,  Shouji Yagi ,  Tomomi Sakata

    发明人： Hiromu Ishii ,  Yasuyuki Tanabe ,  Katsuyuki Machida ,  Masami Urano ,  Shouji Yagi ,  Tomomi Sakata

    IPC分类号： H01L29/80

    CPC分类号： B81B3/0008 ,  B81B2201/045 ,  B81C2201/112

    摘要： In a micromachine according to this invention, a polyimide film is formed on the surface of each electrode. The polyimide film is formed as follows. A substrate having each electrode and a counterelectrode are dipped in an electrodeposition polyimide solution, and a positive voltage is applied to the electrode. A material dissolved in the electrodeposition polyimide solution is deposited on a surface of the positive-voltage-applied electrode that is exposed in the solution, thus forming a polyimide film on the surface.

    摘要翻译： 在根据本发明的微型机器中，在每个电极的表面上形成聚酰亚胺膜。 聚酰亚胺膜如下形成。 将具有每个电极和反电极的基板浸渍在电沉积聚酰亚胺溶液中，并向电极施加正电压。 溶解在电沉积聚酰亚胺溶液中的材料沉积在暴露在溶液中的正电压施加电极的表面上，从而在表面上形成聚酰亚胺膜。

    Optical switch device
    8.
    发明授权
    Optical switch device 失效
    光开关器件

    公开(公告)号：US06912336B2

    公开(公告)日：2005-06-28

    申请号：US10387174

    申请日：2003-03-11

    申请人： Hiromu Ishii ,  Yasuyuki Tanabe ,  Katsuyuki Machida ,  Masami Urano ,  Toshishige Shimamura ,  Yuji Uenishi ,  Takanori Kiyokura

    发明人： Hiromu Ishii ,  Yasuyuki Tanabe ,  Katsuyuki Machida ,  Masami Urano ,  Toshishige Shimamura ,  Yuji Uenishi ,  Takanori Kiyokura

    IPC分类号： G02B6/35 ,  G02B6/26 ,  G02B6/42

    CPC分类号： G02B6/3584 ,  B81B3/0043 ,  B81B2201/042 ,  B81B2203/0384 ,  B81B2203/04 ,  B81C1/00103 ,  B81C1/00246 ,  B81C2203/0735 ,  G02B6/3518 ,  G02B6/356 ,  G02B6/357

    摘要： An optical switch device includes at least an optical switch element and driving control circuit. In the optical switch element, a fixed electrode portion is arranged, via a dielectric layer, on a semiconductor substrate on which an integrated circuit is formed. A mirror structure has a plate-shaped movable portion arranged above the fixed electrode portion while opposing the fixed electrode portion. A reflecting portion is formed at least at part of the movable portion to reflect light. A support member is fixed around the fixed electrode portion on the semiconductor substrate via a dielectric layer and supports the mirror structure. The driving control circuit is incorporated in the integrated circuit to drive the optical switch element by applying a predetermined potential to the movable portion and fixed electrode portion.

    摘要翻译： 光开关装置至少包括光开关元件和驱动控制电路。 在光开关元件中，固定电极部分经由电介质层布置在其上形成集成电路的半导体衬底上。 反射镜结构具有布置在固定电极部分上方并与固定电极部分相对的板状可动部分。 反射部分至少形成在可动部分的一部分以反射光。 支撑构件通过电介质层固定在半导体衬底上的固定电极部分周围，并支撑反射镜结构。 驱动控制电路结合在集成电路中，通过向可动部分和固定电极部分施加预定电位来驱动光开关元件。