Invention Grant
- Patent Title: Method for forming a lithography pattern
- Patent Title (中): 光刻图案的形成方法
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Application No.: US11426233Application Date: 2006-06-23
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Publication No.: US07482280B2Publication Date: 2009-01-27
- Inventor: Ching-Yu Chang , Chin-Hsiang Lin , Burn Jeng Lin
- Applicant: Ching-Yu Chang , Chin-Hsiang Lin , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; G03F7/00
Abstract:
A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.
Public/Granted literature
- US20070037410A1 METHOD FOR FORMING A LITHOGRAPHY PATTERN Public/Granted day:2007-02-15
Information query
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