发明授权
- 专利标题： High voltage semiconductor device utilizing a deep trench structure
- 专利标题（中）： 利用深沟槽结构的高压半导体器件
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申请号： US11554368申请日： 2006-10-30
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公开(公告)号： US07482662B2公开(公告)日： 2009-01-27
- 发明人: Chen-Bau Wu , Shun-Liang Hsu , You-Kuo Wu , Yu-Chang Jong
- 申请人： Chen-Bau Wu , Shun-Liang Hsu , You-Kuo Wu , Yu-Chang Jong
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
A semiconductor device includes a substrate having a source, a drain, and a gate between the source and the drain. Both the source and the drain include a first edge, and the gate includes a first portion. A first deep trench structure is situated under the first portion of the gate and proximate to the first edge of the source and the first edge of the drain.
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