Invention Grant
- Patent Title: Interference display cell and fabrication method thereof
- Patent Title (中): 干涉显示单元及其制造方法
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Application No.: US11221806Application Date: 2005-09-09
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Publication No.: US07485236B2Publication Date: 2009-02-03
- Inventor: Wen-Jian Lin
- Applicant: Wen-Jian Lin
- Applicant Address: US CA San Digeo
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Digeo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: TW92123498A 20030826
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
An optical interference display unit with a first electrode, a second electrode and support structures located between the two electrodes is provided. The second electrode has at least a first material layer and a second material layer. At least one material layer of the two is made from conductive material and the second conductive layer is used as a mask while an etching process is performed to etch the first material layer to define the second electrode.
Public/Granted literature
- US20060006138A1 Interference display cell and fabrication method thereof Public/Granted day:2006-01-12
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