发明授权
- 专利标题： Use of supercritical fluid for low effective dielectric constant metallization
- 专利标题（中）： 超临界流体用于低有效介电常数金属化
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申请号： US11614094申请日： 2006-12-21
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公开(公告)号： US07485963B2公开(公告)日： 2009-02-03
- 发明人: Satyavolu S. Papa Rao , Stephan Grunow , Phillip D. Matz
- 申请人： Satyavolu S. Papa Rao , Stephan Grunow , Phillip D. Matz
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L23/522 ; H01L23/532
摘要：
An embodiment of the invention is a method of manufacturing an integrated circuit. The method includes forming a capping layer of a back end structure (step 706), drilling an extraction line from the capping layer to an inter-metal dielectric layer (step 708), performing a supercritical fluid process to remove portions of the inter-metal dielectric layer that are coupled to the extraction line (step 710): thereby forming a denuded dielectric region. Another embodiment of the invention is an integrated circuit 2 having a back-end structure 5 coupled to a front-end structure 4. The back-end structure 5 having a first metal level 22. The first metal level 22 having metal interconnects 15 and an inter-metal dielectric layer 19. The back-end structure 5 further containing an extraction line 24 and a denuded dielectric region 25 coupled to the extraction line 24.
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