发明授权
- 专利标题: Method of dry etching, method of manufacturing magnetic recording medium, and magnetic recording medium
- 专利标题(中): 干蚀刻方法,制造磁记录介质的方法和磁记录介质
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申请号: US11156469申请日: 2005-06-21
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公开(公告)号: US07488429B2公开(公告)日: 2009-02-10
- 发明人: Shuichi Okawa , Kazuhiro Hattori , Mikiharu Hibi , Mitsuru Takai
- 申请人: Shuichi Okawa , Kazuhiro Hattori , Mikiharu Hibi , Mitsuru Takai
- 申请人地址: JP Tokyo
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP2004-190061 20040628
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; G11B5/82 ; G11B5/65 ; C03C15/00 ; C03C25/68 ; C23F1/00
摘要:
The recording layer (to-be-etched layer), a main mask layer, and a sub mask layer are formed in this order over a substrate, and the sub mask layer is processed into a predetermined concavo-convex pattern. Next, parts of the main mask layer under the concave portions are removed by reactive ion etching using oxygen or ozone as the reactive gas. Parts of the recording layer under the concave portions are also removed by dry etching, whereby the recording layer is shaped into the concavo-convex pattern. The main mask layer is chiefly made of carbon. The sub mask layer is made of a material having an etching rate lower than that of carbon with respect to the reactive ion etching in the step of processing the main mask layer.
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