发明授权
- 专利标题: Integrated circuit chip package having a ring-shaped silicon decoupling capacitor
- 专利标题(中): 具有环形硅去耦电容器的集成电路芯片封装
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申请号: US11258672申请日: 2005-10-25
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公开(公告)号: US07489035B2公开(公告)日: 2009-02-10
- 发明人: Eun-Seok Song , Hee-Seok Lee
- 申请人: Eun-Seok Song , Hee-Seok Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Marger Johnson & McCollom, P.C.
- 优先权: KR10-2004-0090669 20041109
- 主分类号: H01L23/34
- IPC分类号: H01L23/34
摘要:
A semiconductor package features a ring-shaped silicon decoupling capacitor that reduces simultaneous switching noise. The decoupling capacitor is fabricated on a substrate from silicon using a wafer fabrication process and takes the form of an annular capacitive structure that extends around a periphery of a substrate-mounted integrated circuit (IC). The decoupling capacitor has a reduced thickness on or below a chip level and takes the place of a conventional power/ground ring. Therefore, the decoupling capacitor can be disposed within the package without increasing the thickness and the size of the package. The decoupling capacitor may be coupled to various power pins, allowing optimum wire bonding, shortened electrical connections, and reduced inductance. Bonding wires connected to the decoupling capacitor have higher specific resistance, lowering the peak of the resonance frequency and thereby reducing simultaneous switching noise.