A novel structure of an active display device is disclosed. The device is characterized as having at least one display device comprising a substrate having an insulated surface with at least one thin film transistor (TFT) formed over the substrate and a gate insulating film and gate electrode adjacent to the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. In one embodiment, an interlayer insulating film covers the TFT and an aluminum lead electrode is formed over the interlayer insulating layer that is electrically connected to one of the source or drain regions of the TFT through a hole of the interlayer insulating film. In another embodiment of the invention the first and second holes of the interlayer insulating layer do not overlap. In a preferred embodiment, an organic resin film, with a pixel electrode form thereover, is formed over the thin film transistor, the interlayer insulating film and the lead electrode is provide a leveled upper surface. The pixel electrode is electrically connected to the TFT via the lead electrode. The present invention is applicable with any device with a display, such as a television or a personal computer.