发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
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申请号: US11723830申请日: 2007-03-22
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公开(公告)号: US07489576B2公开(公告)日: 2009-02-10
- 发明人: Takuya Hirota , Takao Yanagida
- 申请人: Takuya Hirota , Takao Yanagida
- 申请人地址: JP Kanagawa
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Young & Thompson
- 优先权: JP2006-082519 20060324
- 主分类号: G11C7/02
- IPC分类号: G11C7/02
摘要:
A semiconductor storage device has first and second cell arrays including a plurality of memory cells to store data, a sense amplifier selectively connected with either one of the first and second cell arrays, a first precharge circuit to set a pair of bit lines in the first cell array to a predetermined voltage, a second precharge circuit to set a pair of bit lines in the second cell array to a predetermined voltage, a first switch circuit to connect the sense amplifier with the first cell array, a second switch circuit to connect the sense amplifier with the second cell array, and a switch controller to control conductive state of the first and second switch circuits. In non-selection state where the sense amplifier does not access any of the cell arrays, the switch controller controls one of the switch circuits into conducting state.
公开/授权文献
- US20070223297A1 Semiconductor storage device 公开/授权日:2007-09-27
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