发明授权
US07491653B1 Metal-free catalysts for pulsed deposition layer process for conformal silica laminates
有权
用于保形二氧化硅层压板的脉冲沉积层工艺的无金属催化剂
- 专利标题： Metal-free catalysts for pulsed deposition layer process for conformal silica laminates
- 专利标题（中）： 用于保形二氧化硅层压板的脉冲沉积层工艺的无金属催化剂
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申请号： US11318268申请日： 2005-12-23
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公开(公告)号： US07491653B1公开(公告)日： 2009-02-17
- 发明人: George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
- 申请人： George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/31
摘要：
A metal- and metalloid-free nanolaminate dielectric film can be formed according to a pulsed layer deposition (PDL) process. A metal- and metalloid-free compound is used to catalyze the reaction of silica deposition by surface reaction of alkoxysilanols. Films can be grown at rates faster than 30 nm per exposure cycle. The invention can be used for the deposition of both doped (e.g., PSG) and undoped silicon oxide films. The films deposited are conformal, hence the method can accomplish void free gap-fill in high aspect ratio gaps encountered in advanced technology nodes (e.g., the 45 nm technology node and beyond), and can be used in other applications requiring conformal dielectric deposition.
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