发明授权
US07491955B2 EUV light source, EUV exposure system, and production method for semiconductor device
有权
EUV光源,EUV曝光系统和半导体器件的制造方法
- 专利标题: EUV light source, EUV exposure system, and production method for semiconductor device
- 专利标题(中): EUV光源,EUV曝光系统和半导体器件的制造方法
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申请号: US11629498申请日: 2005-06-22
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公开(公告)号: US07491955B2公开(公告)日: 2009-02-17
- 发明人: Masayuki Shiraishi
- 申请人: Masayuki Shiraishi
- 申请人地址: JP Tokyo
- 专利权人: Nikon Corporation
- 当前专利权人: Nikon Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- 优先权: JP2004-186132 20040624
- 国际申请: PCT/JP2005/012007 WO 20050622
- 国际公布: WO2006/006408 WO 20060119
- 主分类号: G01N21/33
- IPC分类号: G01N21/33 ; G01J3/10 ; H05H1/24
摘要:
An Sn—Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank 4. The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle 1, so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle 1 disposed inside a vacuum chamber 7. The liquid-form Sn alloy that is caused to jet from the nozzle 1 has a spherical shape as a result of surface tension, and forms a target 2. Laser light generated by an Nd:YAG laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and introduced into the vacuum chamber 7. The target 2 that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.
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