发明授权
US07491955B2 EUV light source, EUV exposure system, and production method for semiconductor device 有权
EUV光源,EUV曝光系统和半导体器件的制造方法

EUV light source, EUV exposure system, and production method for semiconductor device
摘要:
An Sn—Ga type alloy having a composition in which the atomic % of Sn is 15% or less is accommodated inside a heated tank 4. The Sn alloy pressurized by the pressurizing pump is conducted to a nozzle 1, so that a liquid-form Sn alloy is caused to jet from the tip end of this nozzle 1 disposed inside a vacuum chamber 7. The liquid-form Sn alloy that is caused to jet from the nozzle 1 has a spherical shape as a result of surface tension, and forms a target 2. Laser light generated by an Nd:YAG laser light source 8 disposed on the outside of the vacuum chamber 7 is focused by a lens 9 and introduced into the vacuum chamber 7. The target 2 that is irradiated by the laser is converted into a plasma, and radiates light that includes EUV light.
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