发明授权
- 专利标题: Methods of forming semiconductor devices including Fin structures
- 专利标题(中): 形成包括鳍结构的半导体器件的方法
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申请号: US11691529申请日: 2007-03-27
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公开(公告)号: US07494877B2公开(公告)日: 2009-02-24
- 发明人: Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Yong-Hoon Son , In-Soo Jung
- 申请人: Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Yong-Hoon Son , In-Soo Jung
- 申请人地址: KR Kyungki-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Kyungki-do
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR2003-0068407 20031001
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
A method of forming a semiconductor device may include forming a fin structure extending from a substrate. The fin structure may include first and second source/drain regions and a channel region therebetween, and the first and second source/drain regions may extend a greater distance from the substrate than the channel region. A gate insulating layer may be formed on the channel region, and a gate electrode may be formed on the gate insulating layer so that the gate insulating layer is between the gate electrode and the channel region. Related devices are also discussed.