发明授权
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
-
申请号： US11641336申请日： 2006-12-19
-
公开(公告)号： US07494898B2公开(公告)日： 2009-02-24
- 发明人: Masahiro Sunohara , Yuichi Taguchi , Akinori Shiraishi , Naoyuki Koizumi , Kei Murayama , Hideaki Sakaguchi , Mitsutoshi Higashi
- 申请人： Masahiro Sunohara , Yuichi Taguchi , Akinori Shiraishi , Naoyuki Koizumi , Kei Murayama , Hideaki Sakaguchi , Mitsutoshi Higashi
- 申请人地址： JP Nagano
- 专利权人： Shinko Electric Industries Co., Ltd.
- 当前专利权人： Shinko Electric Industries Co., Ltd.
- 当前专利权人地址： JP Nagano
- 代理机构： Ladas & Parry LLP
- 优先权： JP2006-001802 20060106
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A disclosed method for manufacturing a semiconductor device having a structure where a semiconductor element is mounted on a first substrate includes the steps of: bonding the first substrate on which the semiconductor element is mounted and a second substrate made of a material different from a material of the first substrate so as to encapsulate the semiconductor element; forming a first groove in the first substrate and a second groove in the second substrate; and cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device.
公开/授权文献
- US20070161211A1 Method for manufacturing semiconductor device 公开/授权日：2007-07-12
信息查询
IPC分类:
