发明授权
- 专利标题: Technique for transferring strain into a semiconductor region
- 专利标题(中): 将应变转移到半导体区域的技术
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申请号: US11112498申请日: 2005-04-22
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公开(公告)号: US07494906B2公开(公告)日: 2009-02-24
- 发明人: Thorsten Kammler , Martin Gerhardt , Frank Wirbeleit
- 申请人: Thorsten Kammler , Martin Gerhardt , Frank Wirbeleit
- 申请人地址: US TX Austin
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: US TX Austin
- 代理机构: Williams, Morgan & Amerson, P.C.
- 优先权: DE102004031710 20040630
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/425
摘要:
A dislocation region is formed by implanting a light inert species, such as hydrogen, to a specified depth and with a high concentration, and by heat treating the inert species to create “nano” bubbles, which enable a certain mechanical decoupling to underlying device regions, thereby allowing a more efficient creation of strain that is induced by an external stress-generating source. In this way, strain may be created in a channel region of a field effect transistor by, for instance, a stress layer or sidewall spacers formed in the vicinity of the channel region.