发明授权
- 专利标题: Organic thin-film transistor and method for manufacturing the same
- 专利标题(中): 有机薄膜晶体管及其制造方法
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申请号: US11878907申请日: 2007-07-27
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公开(公告)号: US07495253B2公开(公告)日: 2009-02-24
- 发明人: Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
- 申请人: Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Rabin & Berdo, P.C.
- 优先权: TW93103565A 20040213
- 主分类号: H01L51/10
- IPC分类号: H01L51/10
摘要:
An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.