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    Organic thin-film transistor and method for manufacturing the same
    1.
    发明申请
    Organic thin-film transistor and method for manufacturing the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US20080035918A1

    公开(公告)日：2008-02-14

    申请号：US11878907

    申请日：2007-07-27

    申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

    摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

    摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

    Organic thin-film transistor and method for manufacturing the same
    2.
    发明授权
    Organic thin-film transistor and method for manufacturing the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US07495253B2

    公开(公告)日：2009-02-24

    申请号：US11878907

    申请日：2007-07-27

    申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

    摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

    摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

    Organic thin-film transistor and method for manufacturing the same
    4.
    发明申请
    Organic thin-film transistor and method for manufacturing the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US20050194615A1

    公开(公告)日：2005-09-08

    申请号：US10840637

    申请日：2004-05-07

    申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    IPC分类号： H01L29/417 ,  H01L21/336 ,  H01L29/745 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40

    CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

    摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

    摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

    Organic thin-film transistor and method for manufacturing the same
    5.
    发明授权
    Organic thin-film transistor and method for manufacturing the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US07264989B2

    公开(公告)日：2007-09-04

    申请号：US10840637

    申请日：2004-05-07

    申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

    IPC分类号： H01L51/40 ,  H01L21/84

    CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

    摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

    摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

    Method of fabricating an electronic device
    9.
    发明授权
    Method of fabricating an electronic device 有权
    制造电子装置的方法

    公开(公告)号：US07179697B2

    公开(公告)日：2007-02-20

    申请号：US11131387

    申请日：2005-05-18

    申请人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Cheng-Chung Lee

    发明人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Cheng-Chung Lee

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L27/285 ,  H01L51/0021

    摘要： A method of fabricating an electronic device includes the following steps: a) providing a substrate; b) forming a first strip on the substrate; c) coating an insulation layer on the first strip and the substrate while completely overlaying the first strip and the substrate with the same; d) forming a second strip on the insulation layer; e) forming conductive polymer on the insulation layer while completely overlaying the second strip with the same; f) etching the conductive polymer via plasma etching for completely removing the conductive polymer on the second strip; and g) forming a semiconductor layer on the second strip and the conductive polymer.

    摘要翻译： 一种制造电子器件的方法包括以下步骤：a）提供衬底; b）在衬底上形成第一条带; c）在第一条带和基板上涂覆绝缘层，同时完全覆盖第一条带和基板; d）在所述绝缘层上形成第二条带; e）在绝缘层上形成导电聚合物，同时完全覆盖第二条带; f）通过等离子体蚀刻蚀刻导电聚合物，以完全去除第二条带上的导电聚合物; 以及g）在所述第二条带和所述导电聚合物上形成半导体层。

    Method of fabricating an electronic device
    10.
    发明申请
    Method of fabricating an electronic device 有权
    制造电子装置的方法

    公开(公告)号：US20060079038A1

    公开(公告)日：2006-04-13

    申请号：US11131387

    申请日：2005-05-18

    申请人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Cheng-Chung Lee

    发明人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Cheng-Chung Lee

    IPC分类号： H01L21/84

    CPC分类号： H01L27/285 ,  H01L51/0021

    摘要： A method of fabricating an electronic device includes the following steps: a) providing a substrate; b) forming a first strip on the substrate; c) coating an insulation layer on the first strip and the substrate while completely overlaying the first strip and the substrate with the same; d) forming a second strip on the insulation layer; e) forming conductive polymer on the insulation layer while completely overlaying the second strip with the same; f) etching the conductive polymer via plasma etching for completely removing the conductive polymer on the second strip; and g) forming a semiconductor layer on the second strip and the conductive polymer.

    摘要翻译： 一种制造电子器件的方法包括以下步骤：a）提供衬底; b）在衬底上形成第一条带; c）在第一条带和基板上涂覆绝缘层，同时完全覆盖第一条带和基板; d）在所述绝缘层上形成第二条带; e）在绝缘层上形成导电聚合物，同时完全覆盖第二条带; f）通过等离子体蚀刻蚀刻导电聚合物，以完全去除第二条带上的导电聚合物; 以及g）在所述第二条带和所述导电聚合物上形成半导体层。