Invention Grant
US07495283B2 Nor-type channel-program channel-erase contactless flash memory on SOI
失效
SOI上的非类型通道编程通道擦除非接触式闪存
- Patent Title: Nor-type channel-program channel-erase contactless flash memory on SOI
- Patent Title (中): SOI上的非类型通道编程通道擦除非接触式闪存
-
Application No.: US11193653Application Date: 2005-08-01
-
Publication No.: US07495283B2Publication Date: 2009-02-24
- Inventor: Koucheng Wu
- Applicant: Koucheng Wu
- Main IPC: H01L29/788
- IPC: H01L29/788

Abstract:
A semiconductor device having an electrically erasable programmable read only memory (EEPROM) comprises a contactless array of EEPROM memory cells disposed in rows and columns and constructed over a silicon-on-insulator wafer. Each EEPROM memory cell comprises a drain region, a source region, a gate region, and a body region. The semiconductor device further comprises a plurality of gate lines each connecting the gate regions of a row of EEPROM memory cells, a plurality of body lines each connecting the body regions of a column of EEPROM memory cells, a plurality of source lines each connecting the source regions of a column of EEPROM memory cells, and a plurality of drain lines each connecting the drain regions of a column of EEPROM memory cells. The source lines and the drain lines are buried lines, and the source regions and the drain regions of a column of EEPROM memory cells are insulated from the source regions and the drain regions of the adjacent columns of EEPROM memory cells.
Public/Granted literature
- US20060018164A1 Nor-type channel-program channel-erase contactless flash memory on SOI Public/Granted day:2006-01-26
Information query
IPC分类: