发明授权
- 专利标题： Nitride semiconductor device
- 专利标题（中）： 氮化物半导体器件
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申请号： US11507493申请日： 2006-08-22
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公开(公告)号： US07498618B2公开(公告)日： 2009-03-03
- 发明人: Wataru Saito , Masaaki Onomura , Akira Tanaka , Koichi Tachibana , Masahiko Kuraguchi , Takao Noda , Tomohiro Nitta , Akira Yoshioka
- 申请人： Wataru Saito , Masaaki Onomura , Akira Tanaka , Koichi Tachibana , Masahiko Kuraguchi , Takao Noda , Tomohiro Nitta , Akira Yoshioka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2005-242637 20050824
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.
公开/授权文献
- US20070051977A1 Nitride semiconductor device 公开/授权日：2007-03-08
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