公开(公告)号：US20070051977A1

公开(公告)日：2007-03-08

申请号：US11507493

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

发明人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

IPC分类号： H01L31/00 ,  H01L21/336

CPC分类号： H01L29/7787 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316

摘要： A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

摘要翻译： 一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。

公开(公告)号：US07498618B2

公开(公告)日：2009-03-03

申请号：US11507493

申请日：2006-08-22

申请人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

发明人： Wataru Saito ,  Masaaki Onomura ,  Akira Tanaka ,  Koichi Tachibana ,  Masahiko Kuraguchi ,  Takao Noda ,  Tomohiro Nitta ,  Akira Yoshioka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316

摘要： A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

摘要翻译： 一种氮化物半导体器件包括：衬底本体，包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方，第二主电极设置在高电阻部分的上方。

公开(公告)号：US07554127B2

公开(公告)日：2009-06-30

申请号：US10917521

申请日：2004-08-13

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01L31/0304

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/34333

摘要： Disclosed is a semiconductor light-emitting element, comprising an n-type cladding layer; a light guide layer positioned on the n-type cladding layer; a multiple quantum well structure active layer positioned on the light guide layer; a p-type carrier overflow prevention layer positioned on the active layer and having an impurity concentration of 5×1018 cm−3 to not more than 3×1019 cm−3; a p-type light guide layer positioned on the p-type carrier overflow prevention layer and having an impurity concentration of 1×1018 cm−3 or more and less than that of the p-type carrier overflow prevention layer; and a p-type cladding layer positioned on the p-type light guide layer and having a band gap narrower than the p-type carrier overflow prevention layer, and a method of manufacturing the same.

摘要翻译： 公开了一种半导体发光元件，包括n型覆层; 定位在n型包覆层上的导光层; 位于导光层上的多量子阱结构有源层; 位于有源层上并且杂质浓度为5×10 18 cm -3至3×10 19 cm -3以下的p型载流子溢出防止层; p型导光层，位于p型载流子溢流防止层上，杂质浓度为1×10 18 cm -3以上且小于p型载流子溢出防止层的杂质浓度; 以及位于p型导光层上并具有比p型载流子溢流防止层窄的带隙的p型覆层，及其制造方法。

公开(公告)号：US07358156B2

公开(公告)日：2008-04-15

申请号：US11376547

申请日：2006-03-16

申请人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/32341

摘要： A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.

摘要翻译： 一种制造化合物半导体器件的方法包括：形成从层叠体的主表面的边缘延伸到第一主表面的内部区域的划线槽。 层叠体具有第一主表面和第二主表面，并且通过化合物半导体多层膜在基板上的晶体生长而形成。 划线槽边缘浅，内部深处。 该方法还可以包括通过将负载施加到层压体的第二主表面，将层压体分离成由包括划线槽的分离平面分开的第一和第二部分。

公开(公告)号：US20070086496A1

公开(公告)日：2007-04-19

申请号：US11357408

申请日：2006-02-21

申请人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

发明人： Akira Tanaka ,  Chie Hongo ,  Yoshiyuki Harada ,  Hideto Sugawara ,  Masaaki Onomura ,  Hiroshi Katsuno

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/3407 ,  H01L2924/00014

摘要： A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type. The first and second barrier layers and the well layer contain indium. At least one of the first barrier layer and the second barrier layer has a thickness of 30 nm or more.

摘要翻译： 一种半导体发光器件包括：由第一导电类型的氮化物半导体制成的第一覆层; 设置在所述第一包层上的有源层，所述有源层包括由氮化物半导体制成的第一势垒层，由氮化物半导体制成的第二阻挡层，以及由氮化物半导体制成的阱层，所述阱层设置在所述第一栅极 层和第二阻挡层; 以及设置在所述有源层上的第二覆层，所述第二覆层由第二导电类型的氮化物半导体制成。 第一和第二阻挡层和阱层含有铟。 第一阻挡层和第二阻挡层中的至少一个具有30nm以上的厚度。

公开(公告)号：US07333523B2

公开(公告)日：2008-02-19

申请号：US11484006

申请日：2006-07-11

申请人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

发明人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054

摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。

公开(公告)号：US20070086497A1

公开(公告)日：2007-04-19

申请号：US11374072

申请日：2006-03-14

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/0425 ,  H01S5/02461 ,  H01S5/22 ,  H01S5/32341

摘要： A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode ; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

摘要翻译： 半导体激光器件包括：有源层; 第一导电类型的包覆层; 绝缘膜; 第一电极; 以及设置在第一电极上的焊盘电极。 包覆层设置在有源层上方，并且具有构成条纹波导的脊部和与脊部的两侧相邻的非脊部。 绝缘膜覆盖脊部的侧面和非脊部的上表面。 第一电极具有设置在非脊部之上的间隙部分。 焊盘电极设置在第一电极上。

公开(公告)号：US20070009000A1

公开(公告)日：2007-01-11

申请号：US11484006

申请日：2006-07-11

申请人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

发明人： Akira Tanaka ,  Hideto Sugawara ,  Chie Hongo ,  Yoshiyuki Harada ,  Masaaki Onomura

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054

摘要： A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.

摘要翻译： 一种半导体激光装置，包括：第一导电类型的第一包层; 设置在所述第一包层上并具有量子阱结构的有源层; 设置在溢出阻挡层上的第二导电类型的溢出阻挡层。 有源层包括杂质浓度为3×10 -3 -3 -3以上并且在溢流阻挡层和阱层之间具有30nm或更小的厚度的区域 在活动层衣柜中到溢出阻挡层。

公开(公告)号：US20070093041A1

公开(公告)日：2007-04-26

申请号：US11376547

申请日：2006-03-16

申请人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

发明人： Akira Tanaka ,  Masaaki Onomura ,  Seiji Iida ,  Takayuki Matsuyama

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/32341

摘要： A method of manufacturing a compound semiconductor device comprises forming a scribed groove extending from an edge of a major surface of a laminated body to an internal region on the first major surface. The laminated body has the first major surface and a second major surface and is formed by crystal growth of a compound semiconductor multilayer film on a substrate. The scribed groove is shallow at the edge and deep in the internal region. The method may further comprise separating the laminated body into first and second portions separated by a separation plane including the scribed groove by applying load to the second major surface of the laminated body.

摘要翻译： 一种制造化合物半导体器件的方法包括：形成从层叠体的主表面的边缘延伸到第一主表面的内部区域的划线槽。 层叠体具有第一主表面和第二主表面，并且通过化合物半导体多层膜在基板上的晶体生长而形成。 划线槽边缘浅，内部深处。 该方法还可以包括通过将负载施加到层压体的第二主表面，将层压体分离成由包括划线槽的分离平面分开的第一和第二部分。

公开(公告)号：US07135710B2

公开(公告)日：2006-11-14

申请号：US11061735

申请日：2005-02-22

申请人： Akira Tanaka ,  Masaaki Onomura

发明人： Akira Tanaka ,  Masaaki Onomura

IPC分类号： H01L29/22

CPC分类号： H01L33/02

摘要： A first cladding layer of a first conductivity type formed above a crystal substrate, an active layer formed above the first cladding layer, a diffusion prevention layer formed on the active layer and preventing an impurity from diffusing into the active layer, an overflow prevention layer of a second conductivity type, the second conductivity type being different from the first conductivity type, which is formed on the diffusion prevention layer and prevents an overflow of carriers implanted into the active layer, and a second cladding layer of the second conductivity type formed above the overflow prevention layer are provided.

摘要翻译： 形成在晶体基板上方的第一导电类型的第一包层，形成在第一包层上方的有源层，形成在有源层上的防止扩散层并防止杂质扩散到有源层中的防溢出层， 第二导电类型，第二导电类型不同于形成在扩散防止层上的第一导电类型，并且防止注入有源层的载流子溢出，以及形成在第二导电类型上方的第二导电类型的第二包层 提供溢流防止层。