发明授权
- 专利标题： Vertical resistors and band-gap voltage reference circuits
- 专利标题（中）： 垂直电阻和带隙电压参考电路
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申请号： US11102340申请日： 2005-04-08
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公开(公告)号： US07498657B2公开(公告)日： 2009-03-03
- 发明人: Min-Hwa Chi
- 申请人： Min-Hwa Chi
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Thomas, Kayden, Horstemeyer & Risley
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A vertical resistor. A substrate includes a trench filled by an isolation layer. A first doped-type region and a second doped-type region are formed on both sides of the trench. The first doped-type region receives a control bias, the second doped-type region receives a reference bias, and a resistance between the second doped-type region and the substrate is adjusted in response to a voltage difference between the control bias and the reference bias.
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