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发明授权
US07501674B2 Semiconductor device having fin transistor and planar transistor and associated methods of manufacture 有权
具有鳍式晶体管和平面晶体管的半导体器件及其制造方法

Semiconductor device having fin transistor and planar transistor and associated methods of manufacture
摘要：
Disclosed is a fin transistor and a planar transistor and a method of forming the same. The fin transistor and the planar transistor are formed to have gate electrodes with similar thicknesses by selectively recessing a semiconductor substrate in a planar region where the planar transistor is formed.
摘要（中）：

公开了鳍式晶体管和平面晶体管及其形成方法。 通过在形成平面晶体管的平面区域中选择性地凹入半导体衬底，将鳍状晶体管和平面晶体管形成为具有相似厚度的栅电极。

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