An eFuse sensing circuit replaces the inverters used to provide the “read” output state of a conventional eFuse circuit. The sensing circuit includes a comparator with one input coupled to the eFuse circuitry, and a second input coupled to a reference voltage generator circuit. The reference voltage generator circuit includes an internal resistor. Transistors of the sense circuit are provided to mimic the transistors of the eFuse circuit, so that variations of transistors due to process, voltage and temperature will be substantially the same. The resistor of the sense circuit is then effectively compared with the resistance of the eFuse by the comparator irrespective of temperature and process variations.