发明授权
US07504311B2 Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
有权
化合物和元素半导体用于高性能CMOS的结构和方法
- 专利标题： Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
- 专利标题（中）： 化合物和元素半导体用于高性能CMOS的结构和方法
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申请号： US11762376申请日： 2007-06-13
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公开(公告)号： US07504311B2公开(公告)日： 2009-03-17
- 发明人: Steven John Koester , Devendra Kumar Sadana , Ghavam G. Shahidi
- 申请人： Steven John Koester , Devendra Kumar Sadana , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Keusey, Tutunjian & Bitetto, P.C.
- 代理商 Anne V. Dougherty, Esq.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The first substrate is wafer bonded onto a monocrystalline Si substrate, such that the insulating layer bonds with the monocrystalline Si substrate. A semiconductor device includes a monocrystalline substrate, and a dielectric layer formed on the monocrystalline substrate. A semiconductor compound is formed on the dielectric layer and an elemental semiconductor material formed in proximity of the semiconductor compound and lattice-matched to the semiconductor compound.
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