Invention Grant
- Patent Title: Grafted seed layer for electrochemical plating
- Patent Title (中): 用于电化学电镀的接枝种子层
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Application No.: US11404058Application Date: 2006-04-13
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Publication No.: US07504335B2Publication Date: 2009-03-17
- Inventor: Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
- Applicant: Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
Public/Granted literature
- US20070052104A1 Grafted seed layer for electrochemical plating Public/Granted day:2007-03-08
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