发明授权
- 专利标题： Grafted seed layer for electrochemical plating
- 专利标题（中）： 用于电化学电镀的接枝种子层
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申请号： US11404058申请日： 2006-04-13
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公开(公告)号： US07504335B2公开(公告)日： 2009-03-17
- 发明人: Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
- 申请人： Michael Yang , Aron Rosenfeld , Hooman Hafezi , Zhi-Wen Sun , John Dukovic
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
公开/授权文献
- US20070052104A1 Grafted seed layer for electrochemical plating 公开/授权日：2007-03-08
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