发明授权
- 专利标题： Photoluminescence imaging with preferential detection of photoluminescence signals emitted from a specified material layer of a wafer or other workpiece
- 专利标题（中）： 光致发光成像优先检测从晶片或其他工件的指定材料层发射的光致发光信号
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申请号： US11426877申请日： 2006-06-27
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公开(公告)号： US07504642B2公开(公告)日： 2009-03-17
- 发明人: Steven G. Hummel , Tom Walker
- 申请人： Steven G. Hummel , Tom Walker
- 申请人地址： US CA Milpitas
- 专利权人： Nanometrics Incorporated
- 当前专利权人： Nanometrics Incorporated
- 当前专利权人地址： US CA Milpitas
- 代理机构： Silicon Valley Patent Group LLP
- 主分类号： G01N21/64
- IPC分类号： G01N21/64
摘要：
A method and apparatus uses photoluminescence to identify defects in one or more specified material layers of a sample. One or more filtering elements are used to filter out predetermined wavelengths of return light emitted from a sample. The predetermined wavelengths are selected such that only return light emitted from one or more specified material layers of the sample is detected. Additionally or alternatively, the wavelength of incident light directed into the sample may be selected to penetrate the sample to a given depth, or to excite only one or more selected material layers in the sample. Accordingly, defect data characteristic of primarily only the one or more specified material layers is generated.
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