公开(公告)号：US10107621B2

公开(公告)日：2018-10-23

申请号：US13766598

申请日：2013-02-13

申请人： Nanometrics Incorporated

发明人： Nigel P. Smith

IPC分类号： G01B11/14 ,  G01B11/26 ,  G03F7/20

摘要： An image based overlay measurement is performed using an overlay target that includes shifted overlying gratings. The overlay target is imaged and an asymmetry is measured in the image of the overlaid gratings. The asymmetry is used to determine the overlay error. For each measurement direction, the overlay target may include two or more overlay measurement pads with different offsets between the top and bottom gratings. The measured asymmetries and offsets in the overlay measurement pads may be used to determine the overlay error, e.g., using self-calibration. The pitch and critical dimensions of the overlay target may be optimized to produce a greatest change of symmetry with overlay error for a numerical aperture and wavelength of light used by the image based metrology device.

公开(公告)号：US09110127B2

公开(公告)日：2015-08-18

申请号：US13541541

申请日：2012-07-03

申请人： Emil Kamieniecki

发明人： Emil Kamieniecki

IPC分类号： G01R31/20 ,  G01R31/26 ,  G01R31/265 ,  G01R31/28

CPC分类号： G01R31/2648 ,  G01R31/2656 ,  G01R31/2831

摘要： The present disclosure provides methods and apparatus that enable characterization of an electrical property of a semiconductor specimen, e.g., dopant concentration of a near-surface region of the specimen. In exemplary method, a target depth for measurement is selected. This thickness may, for example, correspond to a nominal production thickness of a thin active device region of the specimen. A light is adjusted to an intensity selected to characterize a target region of the specimen having a thickness no greater than the target depth and a surface of the specimen is illuminated with the light. An AC voltage signal induced in the specimen by the light is measured and this AC voltage may be used to quantify an aspect of the electrical property, e.g., to determine dopant concentration, of the target region.

摘要翻译： 本公开提供了能够表征半导体样品的电性质的方法和装置，例如样品的近表面区域的掺杂剂浓度。 在示例性方法中，选择用于测量的目标深度。 该厚度可以例如对应于样品的薄活性元件区域的标称生产厚度。 将光调整到选择的强度，以表征具有不大于目标深度的厚度的样本的目标区域，并且用光照射样本的表面。 测量通过光在样本中感应的AC电压信号，并且该AC电压可用于量化目标区域的电性质的一个方面，例如确定掺杂剂浓度。

公开(公告)号：US08825444B1

公开(公告)日：2014-09-02

申请号：US12555721

申请日：2009-09-08

申请人： Pablo I. Rovira ,  Jaime Poris ,  Jonathan M. Madsen ,  Scott D. Penner

发明人： Pablo I. Rovira ,  Jaime Poris ,  Jonathan M. Madsen ,  Scott D. Penner

IPC分类号： G06F11/30 ,  G21C17/00 ,  G01C25/00 ,  G01D18/00 ,  G06F11/34 ,  G05B23/02

CPC分类号： G06F11/3409 ,  G05B23/024

摘要： A metrology unit includes an integrated reference target with which an automated system check process is performed. The automated system check process includes measuring a feature on the reference target and determining if the measurement is within a desired specification for the metrology unit. When the metrology unit fails the automated system check, or if otherwise warranted, an automated diagnosis process may be performed using the same integrated reference target. The automated system check and automated diagnosis may be optimized based on correlations between parameters of the automated qualification and parameters of the automated diagnosis. Similarly, the measurement of a processed wafer may be optimized based on a correlation between parameters of the metrology of the processed wafer and parameters of the automated system check.

摘要翻译： 计量单元包括执行自动化系统检查过程的集成参考目标。 自动化系统检查过程包括测量参考目标上的特征并确定测量是否在度量单元的期望规格内。 当计量单元故障自动化系统检查时，或者如果有其他保证，则可以使用相同的集成参考目标来执行自动诊断过程。 可以基于自动化鉴定的参数和自动诊断的参数之间的相关性来优化自动化系统检查和自动诊断。 类似地，可以基于处理的晶片的度量的参数和自动化系统检查的参数之间的相关性来优化处理的晶片的测量。

公开(公告)号：US08818754B2

公开(公告)日：2014-08-26

申请号：US13112821

申请日：2011-05-20

申请人： Boris V. Kamenev ,  Michael J. Darwin

发明人： Boris V. Kamenev ,  Michael J. Darwin

IPC分类号： G01B3/22 ,  G01B5/20 ,  G01B7/28 ,  G01B11/24 ,  G01B13/16 ,  G01B15/04 ,  G01B17/06 ,  G01B21/20 ,  G01B9/02 ,  G01B11/06

CPC分类号： G01B11/2441 ,  G01B9/02072 ,  G01B9/02084 ,  G01B9/02088 ,  G01B9/0209 ,  G01B11/06 ,  G01B11/0675 ,  G01B2290/45 ,  H01L21/00

摘要： The properties of a surface of an object in presence of thin transparent films are determined by generating a library of model signals and processing a measurement signal via searching the library to evaluate films properties and topography. The library may be reduced with principal component analysis to enhance computation speed. Computation enhancement may also be achieved by removal of the height contributions from the signal leaving only the film contribution in the signal. The film measurement signal is compared to a library of film signals to determine the film parameters of the sample. The library of film signals is produced by processing each full signal in a library to similarly remove the height contributions leaving only the film contributions. Additionally, a post-analysis process may be applied to properly evaluate local topography.

摘要翻译： 通过产生模型信号库并通过搜索文库来评估薄膜性质和形貌来测量测量信号，确定薄薄透明薄膜存在的物体表面的性质。 可以通过主成分分析来减少图书馆，以提高计算速度。 也可以通过从信号中除去仅在信号中的膜贡献的信号的高度贡献来实现计算增强。 将胶片测量信号与胶片信号库进行比较，以确定样品的胶片参数。 通过处理图书馆中的每个完整信号来产生电影信号库，以类似地去除仅留下电影贡献的高度贡献。 此外，可以应用后分析过程来适当评估局部地形。

公开(公告)号：US20130257270A1

公开(公告)日：2013-10-03

申请号：US13836852

申请日：2013-03-15

申请人： NANOMETRICS INCORPORATED

发明人： Ronald A. Rojeski

IPC分类号： H01J61/12 ,  H01J61/16

CPC分类号： H01J61/12 ,  B82Y20/00 ,  B82Y99/00 ,  H01J61/16 ,  H01J65/042

摘要： A plasma lamp includes a capsule with a gas contained within the capsule and an ignition source to ionize the gas to produce a light emitting plasma. The ignition source includes field defining conductors within the capsule and a radio frequency source external to the capsule. The radio frequency source and the field defining conductors are configured so that the field defining conductors will produce electric fields in response to RF energy from the radio frequency source and the electric field ionizes at least a portion of the gas.

摘要翻译： 等离子体灯包括具有包含在胶囊内的气体的胶囊和用于使气体离子化以产生发光等离子体的点火源。 点火源包括胶囊内的场限定导体和胶囊外部的射频源。 射频源和场限定导体被配置为使得场限定导体将响应于来自射频源的RF能量而产生电场，并且电场使至少一部分气体电离。

公开(公告)号：US08339605B2

公开(公告)日：2012-12-25

申请号：US12956067

申请日：2010-11-30

申请人： Christopher P. Ausschnitt ,  Lewis A. Binns ,  Jaime D. Morillo ,  Nigel P. Smith

发明人： Christopher P. Ausschnitt ,  Lewis A. Binns ,  Jaime D. Morillo ,  Nigel P. Smith

IPC分类号： G01B11/00 ,  H01L23/544 ,  H01L21/76

CPC分类号： G03F7/70633

摘要： A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

摘要翻译： 用于确定在至少一个光刻层上的光刻产生的集成电路场之间的定位误差的目标系统。 目标系统包括在包含集成电路图案的光刻场上的第一目标图案，其中第一目标图案包括关于第一目标图案中心对称的多个子图案，并且与第一目标图案中心相同的第一距离。 目标系统还包括在不同光刻场上的第二目标图案，其中第二目标图案包括关于第二目标图案中心对称的多个子图案，并且距离第二目标图案中心相同的第二距离。 第二目标图案中心旨在与第一目标图案中心位于相同的位置。 可以确定并比较第一和第二目标图案的中心以确定光刻场之间的定位误差。

公开(公告)号：US20120224176A1

公开(公告)日：2012-09-06

申请号：US13158988

申请日：2011-06-13

申请人： Michael J. Hammond

发明人： Michael J. Hammond

IPC分类号： G01B11/00

CPC分类号： G03F7/70633

摘要： Spectra for diffraction based overlay (DBO) in orthogonal directions, i.e., along the X-axis and Y-axis, are acquired in parallel. A broadband light source produces unpolarized broadband light that is simultaneously incident on X-axis and Y-axis DBO targets. A polarization separator, such as a Wollaston prism or planar birefringent element, receives diffracted light from the X-axis and Y-axis DBO targets and separates the TE and TM polarization states of the diffracted light. A detector simultaneously detects the TE and TM polarization states of the diffracted light for both the X-axis DBO target and the Y-axis DBO target as a function of wavelength.

摘要翻译： 在垂直方向，即沿着X轴和Y轴的衍射基覆盖（DBO）的光谱被并行获取。 宽带光源产生同时入射在X轴和Y轴DBO目标上的非偏振宽带光。 诸如Wollaston棱镜或平面双折射元件的偏振分离器从X轴和Y轴DBO目标接收衍射光并分离衍射光的TE和TM偏振状态。 检测器同时检测作为波长的函数的X轴DBO目标和Y轴DBO目标的衍射光的TE和TM偏振状态。

公开(公告)号：US08068228B2

公开(公告)日：2011-11-29

申请号：US11835206

申请日：2007-08-07

申请人： Ye Feng

发明人： Ye Feng

IPC分类号： G01N21/55

CPC分类号： B82Y20/00 ,  G01N21/211 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/774 ,  G02B1/005 ,  G02B6/12004 ,  G02B6/1225 ,  G02B6/124 ,  G02B27/4233 ,  Y10T29/49826

摘要： A structure that is located adjacent to a measurement target on a substrate is used to convert incident radiation from an optical metrology device to be in-plane with the measurement target. The structure may be, e.g., a grating or photonic crystal, and may include a waveguide between the structure and the measurement target. The in-plane light interacts with the measurement target and is reflected back to the structure, which converts the in-plane light to out-of-plane light that is received by the optical metrology device. The optical metrology device then uses the information from the received light to determine one or more desired parameters of the measurement target. Additional structures may be used to receive light that is transmitted through or scattered by the measurement target if desired.

摘要翻译： 使用与基板上的测量对象相邻的结构，将来自光学测量装置的入射光转换为与测量对象平行。 该结构可以是例如光栅或光子晶体，并且可以包括在结构和测量目标之间的波导。 平面内的光与测量目标相互作用并反射回结构，该结构将平面内的光转换成由光学测量装置接收的平面外的光。 然后光学测量装置使用来自接收光的信息来确定测量目标的一个或多个期望的参数。 如果需要，附加结构可以用于接收由测量目标传递或散射的光。

公开(公告)号：US20110265578A1

公开(公告)日：2011-11-03

申请号：US13093737

申请日：2011-04-25

申请人： Timothy A. Johnson ,  Michael J. Darwin

发明人： Timothy A. Johnson ,  Michael J. Darwin

IPC分类号： G01L1/24

CPC分类号： G01L5/0047 ,  G01B11/24

摘要： An optical metrology device determines the local stress in a film on a substrate. The metrology device maps the thickness of the substrate prior to processing. After processing, the metrology device determines the surface curvature of the substrate caused by the processing and maps the thickness of a film on the top surface after of the substrate after processing. The surface curvature of the substrate may be determined as basis functions. The local stress in the film is then determined using the mapped thickness of the substrate, the determined surface curvature, and the mapped thickness of the film. The local stress may be determined using Stoney's equation that is corrected for non-uniform substrate curvature, non-uniform film thickness, and non-uniform substrate thickness.

摘要翻译： 光学测量装置确定衬底上的膜中的局部应力。 测量设备在处理之前绘制基板的厚度。 在处理之后，测量装置确定由处理引起的基板的表面曲率，并且在处理之后将基板的厚度映射到基板之后的顶表面上。 可以将基板的表面曲率确定为基础函数。 然后使用基板的映射厚度，确定的表面曲率和膜的映射厚度来确定膜中的局部应力。 局部应力可以使用对于不均匀的基底曲率，不均匀的膜厚度和不均匀的基底厚度校正的Stoney方程来确定。

公开(公告)号：US08045790B2

公开(公告)日：2011-10-25

申请号：US12208177

申请日：2008-09-10

申请人： Jian Zhou ,  Hua Chu

发明人： Jian Zhou ,  Hua Chu

IPC分类号： G06K9/00 ,  G06K9/36

CPC分类号： G06K9/3275

摘要： A method for processing wafers includes learning a first pattern at a de-skew site on a first wafer layer, saving the first patterns in a recipe for de-skewing wafers, learning a second pattern at the de-skew site a second wafer layer, and saving the second pattern in the same recipe for de-skewing wafers. Learning the first pattern may include determining a score of uniqueness for the first pattern. The method further includes finding the de-skew site on the second wafer layer using the first pattern before learning the second pattern. Finding the de-skew site includes determining a score of similarity between the first pattern and the second pattern. Learning the second pattern is performed when the score of similarity is less than a threshold value. A recipe for de-skewing wafers includes multiple patterns of a de-skew site of a wafer, wherein the patterns include a first pattern at the de-skew site on a first wafer layer and a second pattern at the de-skew site on a second wafer layer.

摘要翻译： 一种用于处理晶片的方法包括：在第一晶片层上的去偏斜位置处学习第一图案，将第一图案保存在用于使晶片脱斜的配方中，在第二晶片层的去偏斜位置处学习第二图案， 并将第二模式保存在相同的配方中以使晶片脱斜。 学习第一模式可以包括确定第一模式的唯一性得分。 该方法还包括在学习第二图案之前使用第一图案在第二晶片层上找到去偏斜位置。 寻找去偏斜位置包括确定第一图案和第二图案之间的相似度得分。 当相似度小于阈值时，进行第二模式的学习。 用于去偏斜晶片的配方包括晶片的去偏斜位置的多个图案，其中所述图案包括在第一晶片层上的去偏斜位置处的第一图案和位于第一晶片层上的去偏斜位置处的第二图案 第二晶片层。