发明授权
- 专利标题： Semiconductor device and mask pattern
- 专利标题（中）： 半导体器件和掩模图案
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申请号： US11107750申请日： 2005-04-18
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公开(公告)号： US07504680B2公开(公告)日： 2009-03-17
- 发明人: Osamu Arisumi , Yoshinori Kumura , Kazuhiro Tomioka , Ulrich Egger , Haoran Zhuang , Bum-ki Moon
- 申请人： Osamu Arisumi , Yoshinori Kumura , Kazuhiro Tomioka , Ulrich Egger , Haoran Zhuang , Bum-ki Moon
- 申请人地址： JP Tokyo DE Munich
- 专利权人： Kabushiki Kaisha Toshiba,Infineon Technologies AG
- 当前专利权人： Kabushiki Kaisha Toshiba,Infineon Technologies AG
- 当前专利权人地址： JP Tokyo DE Munich
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 perovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a sidewall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or less.
公开/授权文献
- US20060231876A1 Semiconductor device and mask pattern 公开/授权日：2006-10-19
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