利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

50 条记录 (耗时 0.024 秒)

    Semiconductor device and mask pattern
    1.
    发明申请
    Semiconductor device and mask pattern 失效
    半导体器件和掩模图案

    公开(公告)号：US20060231876A1

    公开(公告)日：2006-10-19

    申请号：US11107750

    申请日：2005-04-18

    申请人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

    发明人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

    IPC分类号： H01L29/00

    CPC分类号： H01L28/55 ,  H01L28/65

    摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 perovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a side wall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or more.

    摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底和电容器，其设置在半导体衬底之上并且被构造为使得电介质膜夹在下电极和上电极之间，电介质膜由 包含作为A位元素的Pb，Ba和Sr中的至少一种和Zr，Ti，Ta，Nb，Mg，W，Fe中的至少一种的ABO 3钙钛矿型氧化物，和 Co作为B位元素，其中当从上方或膜厚方向观察时，电容器的侧壁的曲率半径为250 [nm]以下，并且具有半径为 曲率为{250 [nm] xpi / 6 [rad]}以上。

    Semiconductor device and mask pattern
    2.
    发明授权
    Semiconductor device and mask pattern 失效
    半导体器件和掩模图案

    公开(公告)号：US07504680B2

    公开(公告)日：2009-03-17

    申请号：US11107750

    申请日：2005-04-18

    申请人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

    发明人： Osamu Arisumi ,  Yoshinori Kumura ,  Kazuhiro Tomioka ,  Ulrich Egger ,  Haoran Zhuang ,  Bum-ki Moon

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L28/55 ,  H01L28/65

    摘要： A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a dielectric film is sandwiched between a lower electrode and an upper electrode, the dielectric film being formed of an ABO3 perovskite-type oxide that includes at least one of Pb, Ba and Sr as an A-site element and at least one of Zr, Ti, Ta, Nb, Mg, W, Fe and Co as a B-site element, wherein a radius of curvature of a sidewall of the capacitor, when viewed from above or in a film thickness direction, is 250 [nm] or less, and a length of an arc with the radius of curvature is {250 [nm]×π/6 [rad]} or less.

    摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底和电容器，其设置在半导体衬底之上并且被构造为使得电介质膜夹在下电极和上电极之间，电介质膜由 包含作为A位元素的Pb，Ba和Sr中的至少一种和作为B位元素的Zr，Ti，Ta，Nb，Mg，W，Fe和Co中的至少一种的ABO 3钙钛矿型氧化物， 其中，当从上方或者膜厚方向观察时，电容器的侧壁的曲率半径为250 [nm]以下，曲率半径的弧长为{250 [nm]×ppi / 6 [rad]}以下。

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20060102941A1

    公开(公告)日：2006-05-18

    申请号：US10986060

    申请日：2004-11-12

    申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

    发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

    IPC分类号： H01L29/94

    CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

    摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

    摘要翻译： 公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上方并包括底电极，顶电极和设置在底电极和顶电极之间的电介质膜的电容器，底电极包括含有 铱，设置在电介质膜和第一导电膜之间并由贵金属膜形成的第二导电膜，设置在电介质膜和第二导电膜之间并由具有钙钛矿结构的金属氧化物膜形成的第三导电膜， 以及设置在所述第一导电膜和所述第二导电膜之间并且包括金属膜和金属氧化物膜中的至少一种的防扩散膜，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散。

    Semiconductor device
    4.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07042037B1

    公开(公告)日：2006-05-09

    申请号：US10986060

    申请日：2004-11-12

    申请人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

    发明人： Hiroshi Itokawa ,  Koji Yamakawa ,  Tohru Ozaki ,  Yoshinori Kumura ,  Takamichi Tsuchiya ,  Nicolas Nagel ,  Bum-Ki Moon ,  Andreas Hilliger

    IPC分类号： H01L31/062

    CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

    摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.

    摘要翻译： 公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上方并包括底电极，顶电极和设置在底电极和顶电极之间的电介质膜的电容器，底电极包括含有 铱，设置在电介质膜和第一导电膜之间并由贵金属膜形成的第二导电膜，设置在电介质膜和第二导电膜之间并由具有钙钛矿结构的金属氧化物膜形成的第三导电膜， 以及设置在所述第一导电膜和所述第二导电膜之间并且包括金属膜和金属氧化物膜中的至少一种的防扩散膜，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散。

    Semiconductor memory device having ferroelectric capacitors with hydrogen barriers
    7.
    发明授权
    Semiconductor memory device having ferroelectric capacitors with hydrogen barriers 失效
    具有具有氢屏障的铁电电容器的半导体存储器件

    公开(公告)号：US07400005B2

    公开(公告)日：2008-07-15

    申请号：US11142441

    申请日：2005-06-02

    申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    IPC分类号： H01L29/92

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

    摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

    摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

    Semiconductor memory device and its manufacturing method
    8.
    发明申请
    Semiconductor memory device and its manufacturing method 失效
    半导体存储器件及其制造方法

    公开(公告)号：US20060180894A1

    公开(公告)日：2006-08-17

    申请号：US11142441

    申请日：2005-06-02

    申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

    IPC分类号： H01L29/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

    摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

    摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体存储器件及其制造方法

    公开(公告)号：US20100072525A1

    公开(公告)日：2010-03-25

    申请号：US12553923

    申请日：2009-09-03

    申请人： Yoshiro Shimojo ,  Tohru Ozaki ,  Yoshinori Kumura

    发明人： Yoshiro Shimojo ,  Tohru Ozaki ,  Yoshinori Kumura

    IPC分类号： H01L27/108 ,  H01L21/02

    CPC分类号： H01L27/11512 ,  H01L27/11507 ,  H01L28/55

    摘要： According to a method for manufacturing a semiconductor memory device of the present invention, a capacitor lower electrode film is left on the wiring layer located above a dummy transistor. In this manner, when processing of the capacitors is performed by removing a capacitor upper electrode film and a ferroelectric film, removal of the wiring layer can be prevented, and the connection between the diffusion layer of a select transistor and a bit line can be secured.

    摘要翻译： 根据本发明的半导体存储器件的制造方法，在位于虚拟晶体管上方的布线层上留下电容器下电极膜。 以这种方式，当通过去除电容器上电极膜和铁电体膜来执行电容器的处理时，可以防止布线层的去除，并且可以确保选择晶体管的扩散层和位线之间的连接 。

    NONVOLATILE MEMORY AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    NONVOLATILE MEMORY AND MANUFACTURING METHOD THEREOF 失效
    非易失性存储器及其制造方法

    公开(公告)号：US20100052022A1

    公开(公告)日：2010-03-04

    申请号：US12549163

    申请日：2009-08-27

    申请人： Yoshinori Kumura

    发明人： Yoshinori Kumura

    IPC分类号： H01L27/115 ,  H01L21/00 ,  H01L21/336

    CPC分类号： H01L27/11507 ,  H01L27/11509 ,  H01L28/55

    摘要： According to an aspect of the present invention, there is provided a nonvolatile memory including: a cell transistor including: a gate electrode and first and second diffusion layers; a second insulating film covering the cell transistor; first and second plugs penetrating the second insulating film to reach the first and second diffusion layers, respectively; a ferroelectric capacitor having a ferroelectric film and first and second electrodes, the first electrode contacting with the first plug; a first conductive spacer contacting with the second plug and including the same material as the first electrode; a third insulating film covering side faces of the first electrode, the ferroelectric film and the first conductive spacer; and a first wiring that is continuously formed with the second electrode and connected to the first conductive spacer and that includes the same material as the second electrode.

    摘要翻译： 根据本发明的一个方面，提供了一种非易失性存储器，包括：单元晶体管，包括：栅电极和第一和第二扩散层; 覆盖单元晶体管的第二绝缘膜; 分别穿过第二绝缘膜的第一和第二插塞到达第一和第二扩散层; 具有铁电体膜的铁电电容器和第一和第二电极，所述第一电极与所述第一插塞接触; 与所述第二插头接触并且包括与所述第一电极相同的材料的第一导电间隔件; 覆盖第一电极，铁电体膜和第一导电间隔物的侧面的第三绝缘膜; 以及第一布线，其与第二电极连续地形成并且连接到第一导电间隔物并且包括与第二电极相同的材料。