A method for manufacturing a semiconductor device is disclosed. The method can assess exposure conditions by forming a predetermined assessment pattern on a principal surface of a semiconductor wafer. The predetermined assessment pattern includes a first assessment pattern having a remaining pattern, and a second assessment pattern which includes a remaining pattern formed in a position lower than the first assessment pattern in the direction of the optical axis of an exposure device. The method includes a preparation step, and a step of manufacturing an actual semiconductor device. The preparation step includes a forming step, a measuring step, a calculating step, and a creating step. The step of manufacturing an actual semiconductor device includes a forming step, a measuring step, a calculating step and an assessing step.