发明授权
- 专利标题： Silicon based optically degraded arc for lithographic patterning
- 专利标题（中）： 用于光刻图案的硅基光学降解电弧
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申请号： US10914605申请日： 2004-08-09
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公开(公告)号： US07507521B2公开(公告)日： 2009-03-24
- 发明人: Kyle Y. Flanigan , Juan E. Dominguez , Sergei V. Koveshnikov , Ernisse Putna
- 申请人： Kyle Y. Flanigan , Juan E. Dominguez , Sergei V. Koveshnikov , Ernisse Putna
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Fish & Richardson P.C.
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/004
摘要：
An optically tuned SLAM (Sacrificial Light-Absorbing Material) may be used in a via-first dual damascene patterning process to facilitate removal of the SLAM. The monomers used to produce the optically tuned SLAM may be modified to place an optically sensitive structure in the backbone of the SLAM polymer. The wafer may be exposed to a wavelength to which the SLAM is tuned prior to etching and/or ashing steps to degrade the optically tuned SLAM and facilitate removal.
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