Invention Grant
US07507607B1 Method of forming a silicide bridged anti-fuse with a tungsten plug metalization process
有权
用钨丝塞金属化工艺形成硅化物桥接反熔丝的方法
- Patent Title: Method of forming a silicide bridged anti-fuse with a tungsten plug metalization process
- Patent Title (中): 用钨丝塞金属化工艺形成硅化物桥接反熔丝的方法
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Application No.: US10880284Application Date: 2004-06-29
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Publication No.: US07507607B1Publication Date: 2009-03-24
- Inventor: Charles A. Dark , William M. Coppock , Jeffery L. Nilles , Andy Strachan
- Applicant: Charles A. Dark , William M. Coppock , Jeffery L. Nilles , Andy Strachan
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Mark C. Pickering
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L29/04
Abstract:
A silicide bridged anti-fuse and a method of forming the anti-fuse are disclosed. The silicide bridged anti-fuse can be formed with a tungsten plug metalization process that does not require any additional process steps. As a result, anti-fuses can be added to an electrical circuit as trim elements for no additional cost.
Information query
IPC分类:
