发明授权
- 专利标题: Film formation method and apparatus for semiconductor process
- 专利标题(中): 用于半导体工艺的成膜方法和装置
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申请号: US11623483申请日: 2007-01-16
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公开(公告)号: US07507676B2公开(公告)日: 2009-03-24
- 发明人: Pao-Hwa Chou , Kazuhide Hasebe
- 申请人: Pao-Hwa Chou , Kazuhide Hasebe
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2006-007951 20060116
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/469
摘要:
An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.