发明授权
- 专利标题： Semiconductor memory devices having control circuitry to avoid recovering a charge pump when executing consecutive sections of a continuous operation command and methods of operating the same
- 专利标题（中）： 具有控制电路的半导体存储器件，用于在执行连续操作命令的连续部分时避免电荷泵的恢复及其操作方法
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申请号： US11565016申请日： 2006-11-30
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公开(公告)号： US07508730B2公开(公告)日： 2009-03-24
- 发明人: Yong-Taek Jeong , Sang-Chul Kang
- 申请人： Yong-Taek Jeong , Sang-Chul Kang
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2006-0097194 20061002
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A semiconductor device includes a memory cell array and a command interface that is configured to receive a command from outside of the semiconductor memory device. The command interface is further configured to interpret the received command and to determine if the received command is a continuous operation command. The command interface outputs a command signal corresponding to the command and at least one flag signal that indicates a continuous operation section if the command is a continuous operation command. A control unit is configured to receive the command signal and the at least one flag signal output from the command interface, and to generate a pump control signal based on the received command signal and the at least one flag signal. A charge pump is configured to generate a voltage in response to the pump control signal for use in accessing the memory cell array to read write and/or erase data.
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