发明授权
- 专利标题: Semiconductor laser diode and method of manufacturing the same
- 专利标题(中): 半导体激光二极管及其制造方法
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申请号: US11265712申请日: 2005-11-02
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公开(公告)号: US07508857B2公开(公告)日: 2009-03-24
- 发明人: Sung Ui Hong , Jin Hong Lee , Jin Soo Kim , Ho Sang Kwack , Dae Kon Oh
- 申请人: Sung Ui Hong , Jin Hong Lee , Jin Soo Kim , Ho Sang Kwack , Dae Kon Oh
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 代理机构: Ladas & Parry LLP
- 优先权: KR10-2004-0105818 20041214; KR10-2005-0043466 20050524
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.