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    Semiconductor laser diode and method of manufacturing the same
    1.
    再颁专利
    Semiconductor laser diode and method of manufacturing the same 有权
    半导体激光二极管及其制造方法

    公开(公告)号：USRE45071E1

    公开(公告)日：2014-08-12

    申请号：US13070906

    申请日：2011-03-24

    申请人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

    发明人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

    IPC分类号： H01S5/22

    CPC分类号： B82Y10/00 ,  B82Y20/00

    摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

    摘要翻译： 提供半导体激光二极管及其制造方法。 半导体激光二极管包括设置在基板上的下包层; 包括光波导层，有源层，上覆层和欧姆接触层的脊，其顺序地层叠在下包层上，并且具有预定的宽度，其通过对两者进行沟道蚀刻处理而获得 山脊边; 设置在所述上​​下包层的表面上以控制所述脊的宽度的氧化物层; 布置在所述脊的左通道和右通道上的电介质层; 设置在所得结构的整个表面上以包围脊和电介质层的上电极层; 以及设置在所述基板的底面上的下电极层。 该方法比制造半导体激光二极管的常规方法简单。 此外，通过控制湿式氧化时间，可以自由地控制脊的宽度，并且可以自动形成欧姆接触层。

    QUANTUM DOT LASER DIODE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    QUANTUM DOT LASER DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
    量子激光二极管及其制造方法

    公开(公告)号：US20110165716A1

    公开(公告)日：2011-07-07

    申请号：US13038757

    申请日：2011-03-02

    申请人： Jin Soo KIM ,  Jin Hong LEE ,  Sung Ui HONG ,  Ho Sang KWACK ,  Byung Seok CHOI ,  Dae Kon OH

    发明人： Jin Soo KIM ,  Jin Hong LEE ,  Sung Ui HONG ,  Ho Sang KWACK ,  Byung Seok CHOI ,  Dae Kon OH

    IPC分类号： H01L21/18

    CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2304/00

    摘要： A quantum dot laser diode and a method of fabricating the same are provided. The quantum dot laser diode includes: a first clad layer formed on an InP substrate; a first lattice-matched layer formed on the first clad layer; an active layer formed on the first lattice-matched layer, and including at least one quantum dot layer formed of an InAlAs quantum dot or an InGaPAs quantum dot which is grown by an alternate growth method; a second lattice-matched layer formed on the active layer; a second clad layer formed on the second lattice-matched layer; and an ohmic contact layer formed on the second clad layer.

    摘要翻译： 提供了一种量子点激光二极管及其制造方法。 量子点激光二极管包括：形成在InP衬底上的第一覆层; 形成在第一覆盖层上的第一晶格匹配层; 形成在第一晶格匹配层上的活性层，并且包括由交替生长法生长的InAlAs量子点或InGaPAs量子点形成的至少一个量子点层; 形成在所述有源层上的第二晶格匹配层; 形成在所述第二晶格匹配层上的第二覆层; 以及形成在第二覆盖层上的欧姆接触层。

    Self-oscillation communication module
    3.
    发明授权
    Self-oscillation communication module 有权
    自振荡通信模块

    公开(公告)号：US07907851B2

    公开(公告)日：2011-03-15

    申请号：US11720933

    申请日：2005-12-07

    申请人： Dae-Kon Oh ,  Jin-Hong Lee ,  Jin-Soo Kim ,  Sung-Ui Hong ,  Byung-Seok Choi

    发明人： Dae-Kon Oh ,  Jin-Hong Lee ,  Jin-Soo Kim ,  Sung-Ui Hong ,  Byung-Seok Choi

    IPC分类号： H04B10/00

    CPC分类号： H04B10/40

    摘要： Provided is a self-oscillation communication module in which an optical device, a solar battery, and a radio frequency (RF) device are monolithic-integrated. When an active layer of the optical device contains In(Ga)As quantum dots, the optical device can emit light ranging from 800 to 1600 nm and transmit signals at a high speed of 20 Gbps or higher. Since a light absorption layer of the solar battery is formed of InGa(Al)P which has a higher bandgap than silicon and high visible light absorptivity, the solar battery can generate a large current even with a very small light reception area. Therefore, the self-oscillation communication module can always operate using the solar battery without an external power source even in polar regions and deserts and can perform optical communication or high-frequency wireless communication with a wide frequency range.

    摘要翻译： 提供了一种自振荡通信模块，其中光学装置，太阳能电池和射频（RF）装置是单片集成的。 当光学器件的有源层包含In（Ga）As量子点时，光学器件可以发射800至1600nm的光并以20Gbps或更高的高速传输信号。 由于太阳能电池的光吸收层由具有比硅更高的带隙和高可见光吸收率的InGa（Al）P形成，所以即使具有非常小的光接收面积，太阳能电池也可以产生大电流。 因此，即使在极地区域和沙漠中，自振荡通信模块也可以始终使用没有外部电源的太阳能电池进行操作，并且可以在宽频率范围内进行光通信或高频无线通信。

    QUANTUM DOT LASER DIODE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    QUANTUM DOT LASER DIODE AND METHOD OF MANUFACTURING THE SAME 有权
    量子激光二极管及其制造方法

    公开(公告)号：US20090296766A1

    公开(公告)日：2009-12-03

    申请号：US12499902

    申请日：2009-07-09

    申请人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

    发明人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Ui Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

    IPC分类号： H01S5/00

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173

    摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

    摘要翻译： 提供量子点激光二极管及其制造方法。 制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。 因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。

    Semiconductor laser diode and method of manufacturing the same
    6.
    发明授权
    Semiconductor laser diode and method of manufacturing the same 有权
    半导体激光二极管及其制造方法

    公开(公告)号：US07508857B2

    公开(公告)日：2009-03-24

    申请号：US11265712

    申请日：2005-11-02

    申请人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

    发明人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

    IPC分类号： H01S5/00

    CPC分类号： H01S5/227 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34366

    摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

    摘要翻译： 提供半导体激光二极管及其制造方法。 半导体激光二极管包括设置在基板上的下包层; 包括光波导层，有源层，上覆层和欧姆接触层的脊，其顺序地层叠在下包层上，并且具有预定的宽度，其通过对两者进行沟道蚀刻处理而获得 山脊边; 设置在所述上​​下包层的表面上以控制所述脊的宽度的氧化物层; 布置在所述脊的左通道和右通道上的电介质层; 设置在所得结构的整个表面上以包围脊和电介质层的上电极层; 以及设置在所述基板的底面上的下电极层。 该方法比制造半导体激光二极管的常规方法简单。 此外，通过控制湿式氧化时间，可以自由地控制脊的宽度，并且可以自动形成欧姆接触层。

    Quantum dot laser diode and method of manufacturing the same
    7.
    发明申请
    Quantum dot laser diode and method of manufacturing the same 有权
    量子点激光二极管及其制造方法

    公开(公告)号：US20070128839A1

    公开(公告)日：2007-06-07

    申请号：US11607516

    申请日：2006-12-01

    申请人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

    发明人： Jin Soo Kim ,  Jin Hong Lee ,  Sung Hong ,  Ho Sang Kwack ,  Byung Seok Choi ,  Dae Kon Oh

    IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

    CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173

    摘要： Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

    摘要翻译： 提供量子点激光二极管及其制造方法。 制造量子点激光二极管的方法包括以下步骤：在衬底上形成包括多个光栅的光栅结构层; 在所述光栅结构层上形成第一晶格匹配层; 在所述第一晶格匹配层上形成至少一个具有至少一个量子点的量子点层; 在量子点层上形成第二晶格匹配层; 在第二晶格匹配层上形成包覆层; 以及在所述包覆层上形成欧姆接触层。 因此，可以在不影响量子点的均匀性的情况下获得期望波长的高增益，从而可以提高激光二极管的特性。