发明授权
- 专利标题： Dual phase shift photolithography masks for logic patterning
- 专利标题（中）： 用于逻辑图案化的双相位移光刻掩模
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申请号： US11096991申请日： 2005-03-31
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公开(公告)号： US07509620B2公开(公告)日： 2009-03-24
- 发明人: Paul Davids
- 申请人： Paul Davids
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A pair of phase shift photolithography masks and a process for deriving them is described. In one embodiment, the invention includes deriving a complex electric field estimate for an intended pattern to be produced by phase shift photolithography masks, optimizing the complex electric field estimates, generating a first phase shift mask using the real part of the complex electric field estimates, and generating a second phase shift mask using the imaginary part of the complex electric field estimates.
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