发明授权
- 专利标题： Method and control system for treating a hafnium-based dielectric processing system
- 专利标题（中）： 用于处理铪介质处理系统的方法和控制系统
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申请号： US11038129申请日： 2005-01-21
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公开(公告)号： US07509962B2公开(公告)日： 2009-03-31
- 发明人: David L. O'Meara , Shingo Maku
- 申请人： David L. O'Meara , Shingo Maku
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 主分类号： B08B6/00
- IPC分类号： B08B6/00
摘要：
A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.