发明授权
- 专利标题： Phase change memory device and method of fabricating the same
- 专利标题（中）： 相变存储器件及其制造方法
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申请号： US11855952申请日： 2007-09-14
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公开(公告)号： US07511297B2公开(公告)日： 2009-03-31
- 发明人: Jae-Hoon Jang , Ki-Nam Kim , Soon-Moon Jung
- 申请人： Jae-Hoon Jang , Ki-Nam Kim , Soon-Moon Jung
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR10-2006-0089318 20060914
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L21/00
摘要：
A phase change memory device and a method of fabricating the same are disclosed. The phase change memory device includes a first conductor pattern having a first conductivity type and a sidewall. A second conductor pattern is connected to the sidewall of the first conductor pattern to form a diode. A phase change layer is electrically connected to the second conductor pattern and a top electrode is connected to the phase change layer.
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