发明授权
- 专利标题: Porous silicon for isolation region formation and related structure
- 专利标题(中): 多孔硅用于隔离区形成和相关结构
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申请号: US11423286申请日: 2006-06-09
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公开(公告)号: US07511317B2公开(公告)日: 2009-03-31
- 发明人: Thomas N. Adam , Stephen W. Bedell , Joel P. de Souza , Kathryn T. Schonenberg , Thomas A. Wallner
- 申请人: Thomas N. Adam , Stephen W. Bedell , Joel P. de Souza , Kathryn T. Schonenberg , Thomas A. Wallner
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Hoffman Warnick LLC
- 代理商 Todd M C Li
- 主分类号: H01L27/082
- IPC分类号: H01L27/082 ; H01L27/102
摘要:
A method of forming an isolation region using porous silicon and a related structure are disclosed. One embodiment of the method may include forming a collector region; forming a porous silicon region in the collector region; forming a crystalline silicon intrinsic base layer over the collector region, the intrinsic base layer extending over a portion of the porous silicon region to form an extrinsic base; and forming an isolation region in the porous silicon region. The method is applicable to forming an HBT having a structure including a crystalline silicon intrinsic base extending beyond a collector region and extending over an isolation region to form a continuous intrinsic-to-extrinsic base conduction path of low resistance. The HBT has improved performance by having a smaller collector to intrinsic base interface and larger intrinsic base to extrinsic base interface.