发明授权
- 专利标题： Semiconductor chip and method manufacturing the same
- 专利标题（中）： 半导体芯片和制造方法相同
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申请号： US11420390申请日： 2006-05-25
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公开(公告)号： US07511380B2公开(公告)日： 2009-03-31
- 发明人: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2002-368947 20021219
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
公开/授权文献
- US20060214306A1 Semiconductor Chip and Method for Manufacturing the Same 公开/授权日：2006-09-28
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