Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include (a) a first polymer prepared by the reaction of a compound of Formula 1  wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m  (2)  wherein R is a monovalent organic group and m is 0, 1 or 2; (b) a second polymer that includes at least one of the structures represented by Formulae 3-6; (c) an acid or base catalyst; and (d) an organic solvent. Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circuit devices produced by a method embodiment of the invention.