Invention Grant
US07514733B2 CMOS image device and local impurity region and method of manufacturing the same
有权
具有局部杂质区的CMOS图像器件及其制造方法
- Patent Title: CMOS image device and local impurity region and method of manufacturing the same
- Patent Title (中): 具有局部杂质区的CMOS图像器件及其制造方法
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Application No.: US11373935Application Date: 2006-03-13
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Publication No.: US07514733B2Publication Date: 2009-04-07
- Inventor: Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
- Applicant: Seok-ha Lee , Jae-seob Roh , Jong-Wan Jung
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2005-0053555 20050621
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.
Public/Granted literature
- US20060284274A1 CMOS image device with local impurity region and method of manufacturing the same Public/Granted day:2006-12-21
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