公开(公告)号：US20070008420A1

公开(公告)日：2007-01-11

申请号：US11430093

申请日：2006-05-09

Applicant: Jae-seob Roh

Inventor： Jae-seob Roh

IPC: H04N5/335

CPC classification number: H04N5/335 ,  H04N5/3745 ,  H04N5/376

Abstract: An image sensor and method thereof. In an example, the image sensor, may include a pixel array including a plurality of unit pixels, each of the plurality of unit pixels having a charge transfer unit for transferring charges accumulated in an optoelectronic converter to a charge detector via a charge transfer driving signal. The example image sensor may further include a row driving unit generating a boosted voltage, the boosted voltage set to a boosted voltage level higher than a power voltage level, the boosted voltage selectively boosted in response to a boosting voltage variable control signal. The row driving unit may selectively apply the charge transfer driving signal to the pixel array. In another example, the method may include selectively adjusting a voltage level of a charge transfer driving voltage and transferring the charge transfer driving voltage to a charge transfer unit for controlling an operation of the charge transfer unit.

Abstract translation: 一种图像传感器及其方法。 在一个示例中，图像传感器可以包括包括多个单位像素的像素阵列，多个单位像素中的每一个具有电荷转移单元，用于经由电荷转移驱动信号将累积在光电转换器中的电荷转移到电荷检测器 。 示例图像传感器还可以包括行驱动单元，其产生升压电压，升压电压被设置为高于电源电压电平的升压电压电平，升压电压响应于升压电压可变控制信号而选择性升压。 行驱动单元可以选择性地将电荷传递驱动信号施加到像素阵列。 在另一示例中，该方法可以包括选择性地调整电荷转移驱动电压的电压电平并将电荷转移驱动电压转移到用于控制电荷转移单元的操作的电荷转移单元。

公开(公告)号：US20060231898A1

公开(公告)日：2006-10-19

申请号：US11385958

申请日：2006-03-21

Applicant: Hee-Geun Jeong ,  Jae-Seob Roh ,  Seok-Ha Lee

Inventor： Hee-Geun Jeong ,  Jae-Seob Roh ,  Seok-Ha Lee

IPC: H01L23/62

CPC classification number: H01L27/14623 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

Abstract: Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.

Abstract translation: 提供了一种CMOS图像传感器及其制造方法。 CMOS图像传感器包括具有光电二极管和晶体管的半导体衬底。 在具有光电二极管和晶体管的合成结构上形成层间绝缘层，并且在层间绝缘层上形成遮光图案以包围光电二极管的周边。

公开(公告)号：US20060214821A1

公开(公告)日：2006-09-28

申请号：US11318888

申请日：2005-12-27

Applicant: Jae-Seob Roh

Inventor： Jae-Seob Roh

IPC: H03M7/00

CPC classification number: H03M1/1071 ,  H03M1/123 ,  H03M1/56

Abstract: Provided is an image pick-up semiconductor device capable of testing operating characteristics of an analog-digital converter while the image pick-up semiconductor device operates. The device includes an active pixel sensor array having a plurality of pixels converting optical signals input from an external source into electrical signals, a columnar analog-digital converter converting signals output from the active pixel sensor array into first digital data, and a test analog-digital converter receiving two external signals and converting a voltage difference between the two external signals into second digital data.

Abstract translation: 提供了一种能够在图像拾取半导体器件工作时测试模拟数字转换器的工作特性的图像拾取半导体器件。 该装置包括有源像素传感器阵列，其具有将从外部源输入的光信号转换为电信号的多个像素;将从有源像素传感器阵列输出的信号转换为第一数字数据的柱状模数转换器，以及测试模拟 - 数字转换器接收两个外部信号，并将两个外部信号之间的电压差转换为第二数字数据。

公开(公告)号：US07091751B2

公开(公告)日：2006-08-15

申请号：US10870313

申请日：2004-06-17

Applicant: Jae-Seob Roh ,  Jung-Hyun Nam

Inventor： Jae-Seob Roh ,  Jung-Hyun Nam

IPC: H03K17/00

CPC classification number: H03K5/249

Abstract: Low-power and low-noise CDS (correlated double sampling) comparators for use with a CIS (CMOS image sensor) device are provided. A CDS comparator is constructed using one of various low-power inverters that provide decreased instantaneous transition currents at a logic threshold voltage. The use of such low-power inverters in CDS comparators enables a significant reduction in power consumption and noise in the CIS device, or other devices that implement such CDS comparators and/or inverters.

Abstract translation: 提供了与CIS（CMOS图像传感器）设备一起使用的低功耗和低噪声CDS（相关双采样）比较器。 使用各种低功率逆变器之一构建CDS比较器，其在逻辑阈值电压下提供降低的瞬时跃迁电流。 在CDS比较器中使用这种低功率逆变器可以显着降低CIS设备或实现这种CDS比较器和/或逆变器的其他设备的功耗和噪声。

公开(公告)号：US08174057B2

公开(公告)日：2012-05-08

申请号：US12395757

申请日：2009-03-02

Applicant: Seok-ha Lee ,  Jae-seob Roh ,  Jong-Wan Jung

Inventor： Seok-ha Lee ,  Jae-seob Roh ,  Jong-Wan Jung

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/14689

Abstract: According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.

Abstract translation: 根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。 图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。 在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。 第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。

公开(公告)号：US20070004076A1

公开(公告)日：2007-01-04

申请号：US11401716

申请日：2006-04-11

Applicant: Seok-Ha Lee ,  Jae-Seob Roh ,  Jung-Hyun Nam ,  Hee-Guen Jeong

Inventor： Seok-Ha Lee ,  Jae-Seob Roh ,  Jung-Hyun Nam ,  Hee-Guen Jeong

IPC: H01L21/00 ,  H01L31/12

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

Abstract: Provided are a complementary metal oxide semiconductor (CMOS) image sensor including two types of device isolation regions and a method of fabricating the same. The CMOS image sensor includes a first active region of a semiconductor substrate in which a photodiode is formed; a second active region of the semiconductor substrate connected to a first side of the first active region; a first device isolation region of the semiconductor substrate comprising an insulating layer that surrounds the second active region and bounds the first side of the first active region and a second side of the first active region disposed opposite to the first side of the first active region; and a second device isolation region of the semiconductor substrate bounding at least two opposite sides of the first active region without contacting the second active region, wherein the second device isolation region is doped with impurities

Abstract translation: 提供了包括两种类型的器件隔离区域的互补金属氧化物半导体（CMOS）图像传感器及其制造方法。 CMOS图像传感器包括其中形成光电二极管的半导体衬底的第一有源区; 所述半导体衬底的第二有源区连接到所述第一有源区的第一侧; 所述半导体衬底的第一器件隔离区域包括绝缘层，所述绝缘层围绕所述第二有源区并限制所述第一有源区的第一侧和所述第一有源区的与所述第一有源区的第一侧相对设置的第二侧; 以及限定所述第一有源区的至少两个相对侧而不接触所述第二有源区的所述半导体衬底的第二器件隔离区，其中所述第二器件隔离区掺杂有杂质

公开(公告)号：US20050253948A1

公开(公告)日：2005-11-17

申请号：US11067023

申请日：2005-02-28

Applicant: Jung-hyun Nam ,  Jae-seob Roh

Inventor： Jung-hyun Nam ,  Jae-seob Roh

IPC: H01L27/148 ,  H04N3/14 ,  H04N5/335 ,  H04N5/372 ,  H04N5/376

CPC classification number: H04N5/23241 ,  H04N5/3765

Abstract: A horizontal charge coupled device (CCD) driving circuit, a solid-state image-sensing device having the same, and a method of driving the solid-state image-sensing device, transmits image signals using horizontal driving signals having a middle voltage during rising and falling of the horizontal signals. The middle voltage of the horizontal driving signals is generated when an equipotential switch is turned “on” while the output nodes of buffer circuits are in a floating state.

Abstract translation: 水平电荷耦合器件（CCD）驱动电路，具有该水平电荷耦合器件（CCD）驱动电路的固态图像感测器件和驱动固态图像感测器件的方法，在上升期间使用具有中间电压的水平驱动信号传输图像信号 和水平信号的下降。 当等电位开关“开”时，缓冲电路的输出节点处于浮置状态时，产生水平驱动信号的中间电压。

公开(公告)号：US20050195305A1

公开(公告)日：2005-09-08

申请号：US11063105

申请日：2005-02-22

Applicant: Jeong-ho Lyu ,  Jung-hyun Nam ,  Jae-seob Roh

Inventor： Jeong-ho Lyu ,  Jung-hyun Nam ,  Jae-seob Roh

IPC: H01L27/146 ,  H01L21/822 ,  H01L21/8247 ,  H01L23/58 ,  H01L27/04 ,  H01L27/115 ,  H01L27/148 ,  H01L29/788 ,  H01L29/792 ,  H04N5/335 ,  H04N5/372

CPC classification number: H01L27/14806

Abstract: A biasing circuit for a charge-coupled device (CCD) includes one or more transistors and a nonvolatile memory cell connected in series between a first electric potential node and a second electric potential node and configured to produce a bias voltage at a node between the nonvolatile memory and one of the one or more transistors. The one or more transistors may include one or more transistors coupled in series between a first terminal of the nonvolatile memory cell and the first electric potential node, and one or more transistors coupled in series between a second terminal of the nonvolatile memory cell and the second electric potential node. The nonvolatile memory cell may include a flash memory cell, e.g., a stacked-gate-type flash memory cell and/or a split-gate-type flash memory cell.

Abstract translation: 用于电荷耦合器件（CCD）的偏置电路包括串联连接在第一电势节点和第二电位节点之间的一个或多个晶体管和非易失性存储器单元，并且被配置为在非易失性存储器之间的节点产生偏置电压 存储器和一个或多个晶体管中的一个。 一个或多个晶体管可以包括串联耦合在非易失性存储单元的第一端和第一电位节点之间的一个或多个晶体管，以及串联耦合在非易失性存储单元的第二端子与第二电位节点之间的一个或多个晶体管 电位节点。 非易失性存储器单元可以包括闪存单元，例如堆叠栅型闪存单元和/或分离栅型闪存单元。

公开(公告)号：US20050127457A1

公开(公告)日：2005-06-16

申请号：US10874042

申请日：2004-06-22

Applicant: Jae-Seob Roh ,  Jung-Hyun Nam ,  Jeong-Ho Lyu ,  Duck-Hyung Lee ,  Hae-Kyung Kong ,  Yi-Tae Kim

Inventor： Jae-Seob Roh ,  Jung-Hyun Nam ,  Jeong-Ho Lyu ,  Duck-Hyung Lee ,  Hae-Kyung Kong ,  Yi-Tae Kim

IPC: H01L27/148 ,  H01L29/76

CPC classification number: H01L27/14812

Abstract: A signal converter, for converting signal charge into a voltage, comprises a first driver FET for a first stage that receives the signal charge. A subsequent driver FET is coupled to an output of the first driver FET, and a gate dielectric thickness of the subsequent driver FET is decreased. The subsequent driver FET is either for a second stage or for a third stage. The decrease of the gate dielectric thickness for the subsequent driver FET increases the voltage gain AVtotal without decreasing the charge transfer efficiency such that the overall sensitivity of the signal converter is enhanced.

Abstract translation: 用于将信号电荷转换为电压的信号转换器包括用于接收信号电荷的第一级的第一驱动器FET。 随后的驱动器FET耦合到第一驱动器FET的输出，并且随后的驱动器FET的栅介质厚度减小。 随后的驱动器FET是第二级或第三级。 随后的驱动器FET的栅极电介质厚度的减小增加了电压增益AV总计，而不降低电荷转移效率，使得信号转换器的总体灵敏度增强。

公开(公告)号：US20090166696A1

公开(公告)日：2009-07-02

申请号：US12395757

申请日：2009-03-02

Applicant: Seok-ha Lee ,  Jae-seob Roh ,  Jong-Wan Jung

Inventor： Seok-ha Lee ,  Jae-seob Roh ,  Jong-Wan Jung

IPC: H01L31/112

CPC classification number: H01L27/14603 ,  H01L27/14689

Abstract: According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region.

Abstract translation: 根据CMOS图像器件及其制造方法，暗电流由局部杂质区域减小。 图像装置包括半导体衬底和形成在半导体衬底的预定部分上并与半导体衬底电绝缘的传输栅极。 在传输栅极的一侧上的半导体衬底中形成光电二极管，并且在传输门的另一侧的半导体衬底上形成浮动扩散区。 第一导电类型的局部杂质区域形成为与光电二极管和浮动扩散区域之间的传输栅极部分重叠。