Invention Grant
- Patent Title: Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same
- Patent Title (中): 用于在半导体器件中形成铁电电容器的硬掩模及其制造方法
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Application No.: US11220292Application Date: 2005-09-06
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Publication No.: US07514734B2Publication Date: 2009-04-07
- Inventor: Sanjeev Aggarwal , Kelly J. Taylor , Theodore S. Moise
- Applicant: Sanjeev Aggarwal , Kelly J. Taylor , Theodore S. Moise
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J. Brady III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
Hardmasks and fabrication methods are presented for producing ferroelectric capacitors in a semiconductor device, wherein a hardmask comprising aluminum oxide or strontium tantalum oxide is formed above an upper capacitor electrode material, and capacitor electrode and ferroelectric layers are etched to define a ferroelectric capacitor stack.
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